Zhongyuan (John) Lu is a Principal Engineer in the NAND Cell Reliability group at Micron Technology in Boise, Idaho. Since joining Micron in 2017, he has worked on multiple generations of 3D NAND flash memory, focusing on cell device characterization, reliability assessment, and technology qualification. He has authored or co-authored 7 peer-reviewed journal papers, 20+ internal technical papers, and holds 20+ granted or filed U.S. patents. He has represented Micron at leading conferences including the IEEE IEDM and DRC.
John received his Ph.D. in Physics from the University of California, Berkeley in 2017, with M.S. degrees in Electrical Engineering and Physics from UC Berkeley, and a B.A.Sc. in Applied Physics from USTC. He is passionate about bridging the gap between academic research and industry practice for the next generation of engineers.
Speaker(s): Zhongyuan John,
Virtual: https://events.vtools.ieee.org/m/562206
